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| PD - 95305 IRF7433PBF HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS -12V RDS(on) max 24m@VGS = -4.5V 30m@VGS = -2.5V 46m@VGS = -1.8V ID -8.7A -7.4A -6.3A Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. S 1 2 3 4 8 7 A D D D D S S G 6 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 -8.9 -7.1 -36 2.5 1.6 0.02 8 -55 to +150 Units V A W W W/C V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 50 Units C/W www.irf.com 1 10/12/04 IRF7433PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -12 --- --- -0.4 22 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.007 --- --- --- --- --- --- --- --- --- 20 4.5 4.0 8.8 8.2 272 175 1877 512 310 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 24 VGS = -4.5V, ID = -8.7A m VGS = -2.5V, ID = -7.4A 30 46 VGS = -1.8V, ID = -6.3A -0.9 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -8.7A -1.0 VDS = -9.6V, VGS = 0V A -25 VDS = -9.6V, VGS = 0V, TJ = 70C -100 nA VGS = -8V 100 VGS = 8V --- ID = -8.7A --- nC VDS = -6V --- VGS = -4.5V 13 VDD = -6V, VGS = -4.5V ns 12 ID = -1.0A 408 RD = 6 263 RG = 6 --- VGS = 0V --- pF VDS = -10V --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- 36 28 -2.5 A -36 -1.2 54 42 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. When mounted on 1 inch square copper board, t < 10 sec. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF7433PBF 100 VGS -10.0V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V TOP 100 -ID, Drain-to-Source Current (A) 10 -ID, Drain-to-Source Current (A) 10 VGS -10.0V -7.0V -4.5V -3.0V -2.5V -1.8V -1.5V BOTTOM -1.2V TOP -1.2V 1 1 -1.2V 20s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 0.1 0.1 1 20s PULSE WIDTH Tj = 150C 10 100 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 100 2.0 ID = -8.7A -I D , Drain-to-Source Current (A) 1.5 TJ = 150 C 10 1.0 TJ = 25 C V DS= -10V 20s PULSE WIDTH 1.5 2.0 2.5 0.5 1 1.0 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7433PBF 3200 2800 6 -VGS , Gate-to-Source Voltage (V) C, Capacitance(pF) 2400 2000 1600 1200 800 400 0 1 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = C gd Coss = Cds + Cgd ID = -8.7A 5 V DS=-9.6V V DS=-6V Ciss 4 3 Coss Crss 2 1 10 100 0 0 5 10 15 20 25 -VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) -ID , Drain Current (A) I 10 100us TJ = 150 C TJ = 25 C 10 1ms 1 10ms 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 -VSD ,Source-to-Drain Voltage (V) 1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7433PBF 9.0 VDS 7.5 RD VGS RG V GS Pulse Width 1 s Duty Factor 0.1 % -ID , Drain Current (A) D.U.T. + 6.0 4.5 3.0 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 1.5 VGS 0.0 25 50 TC , Case Temperature ( C) 75 100 125 150 10% Fig 9. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.01 0.1 1 10 100 1 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - V DD 5 IRF7433PBF ( , RDS(on) Drain-to -Source On Resistance) ( RDS ( on ) , Drain-to-Source On Resistance ) 0.050 0.15 0.040 0.12 VGS = -1.8V 0.09 0.030 ID = -8.7A 0.06 VGS = -2.5V 0.03 VGS = -4.5V 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 -ID , Drain Current ( A ) 0.020 0.010 0.0 2.0 4.0 6.0 8.0 10.0 0 -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F QGS QGD VGS -3mA VG IG ID Current Sampling Resistors Charge Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + 10 V D.U.T. - VDS IRF7433PBF 1.0 300 0.8 -VGS(th) ( V ) 0.6 Power (W) 100 ID = -250A 200 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 0 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 TJ , Temperature ( C ) Time (sec) Fig 15. Typical Vgs(th) Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF7433PBF SO-8 Package Outline Dimensions are shown in milimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A C 0.10 [.004] y K x 45 8X b 0.25 [.010] A1 CAB 8X L 7 8X c NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 8 www.irf.com IRF7433PBF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04+ www.irf.com 9 |
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